![半导体装置以及制造半导体装置的方法](/CN/2016/1/196/images/201610984517.jpg)
基本信息:
- 专利标题: 半导体装置以及制造半导体装置的方法
- 专利标题(英):Semiconductor device and method of making a semiconductor device
- 申请号:CN201610984517.8 申请日:2016-11-09
- 公开(公告)号:CN107017222A 公开(公告)日:2017-08-04
- 发明人: 梁志豪 , 波姆皮奥·V·乌马里 , 杨顺迪 , 林根伟
- 申请人: 安世有限公司
- 申请人地址: 荷兰奈梅亨
- 专利权人: 安世有限公司
- 当前专利权人: 安世有限公司
- 当前专利权人地址: 荷兰奈梅亨
- 代理机构: 北京天昊联合知识产权代理有限公司
- 代理人: 麦善勇; 张天舒
- 优先权: 15194136.6 20151111 EP
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/48
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.
公开/授权文献:
- CN107017222B 半导体装置以及制造半导体装置的方法 公开/授权日:2021-10-19
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/34 | .冷却装置;加热装置;通风装置或温度补偿装置 |
----------H01L23/482 | ..由不可拆卸地施加到半导体本体上的内引线组成的 |
------------H01L23/498 | ...引线位于绝缘衬底上的 |