基本信息:
- 专利标题： 包括多个注气点和双注射器的衬底处理室
- 专利标题（英）：Substrate processing chamber including multiple gas injection points and dual injector
- 申请号：CN201710013856.6 申请日：2017-01-09
- 公开(公告)号：CN107017147A 公开(公告)日：2017-08-04
- 发明人： 詹森·李·特雷德韦尔 , 艾夫林·安格洛夫 , 琳达·马尔克斯 , 克里斯汀·西拉迪
- 申请人： 朗姆研究公司
- 申请人地址： 美国加利福尼亚州
- 专利权人： 朗姆研究公司
- 当前专利权人： 朗姆研究公司
- 当前专利权人地址： 美国加利福尼亚州
- 代理机构： 上海胜康律师事务所
- 代理人： 樊英如; 张静
- 优先权： 62/275,837 20160107 US 15/399,692 20170105 US
- 主分类号： H01J37/32
- IPC分类号： H01J37/32
The invention relates to a substrate processing chamber including multiple gas injection points and a dual injector. A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.
公开/授权文献:
- CN107017147B 包括多个注气点和双注射器的衬底处理室 公开/授权日：2020-07-14