基本信息:
- 专利标题： 具有用于嵌入式装置的蚀刻沟槽的半导体装置
- 专利标题（英）：Semiconductor device having etched groove for embedded device
- 申请号：CN201610495703.5 申请日：2016-06-29
- 公开(公告)号：CN106952878A 公开(公告)日：2017-07-14
- 发明人： 柳智妍 , 金本吉 , 新及补
- 申请人： 艾马克科技公司
- 申请人地址： 美国亚利桑那州85284创新圈坦普东路2045号
- 专利权人： 艾马克科技公司
- 当前专利权人： 安靠科技新加坡控股私人有限公司
- 当前专利权人地址： 新加坡新加坡
- 代理机构： 北京寰华知识产权代理有限公司
- 代理人： 林柳岑; 王兴
- 优先权： 10-2016-0001657 20160106 KR 15/149,436 20160509 US
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L21/60 ; H01L23/488 ; H01L23/52
A semiconductor device with etched grooves for embedded devices is disclosed and may, for example, include a substrate comprising a top surface and a bottom surface, a groove extending into the substrate from the bottom surface, and a redistribution structure in the substrate between the top surface and the bottom surface of the substrate. A semiconductor die may, for example, be coupled to the top surface of the substrate. An electronic device may, for example, be at least partially within the groove and electrically coupled to the redistribution structure. A conductive pad may, for example, be on the bottom surface of the substrate. A conductive bump may, for example, be on the conductive pad. The electronic device in the groove may, for example, extend beyond the bottom surface of the substrate a distance that is less than a height of the conductive bump from the bottom surface of the substrate. An encapsulant may, for example, encapsulate the semiconductor die and the top surface of the substrate. The electronic device may, for example, comprise a capacitor.
公开/授权文献:
- CN106952878B 具有用于嵌入式装置的蚀刻沟槽的半导体装置 公开/授权日：2023-03-14
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/02 | .容器；封接 |
| ----------H01L23/31 | ..按配置特点进行区分的 |