基本信息:
- 专利标题： SiC 单晶及其制造方法
- 专利标题（英）：Sic Single Crystal And Method For Producing Same
- 申请号：CN201611075636.8 申请日：2016-11-29
- 公开(公告)号：CN106884205A 公开(公告)日：2017-06-23
- 发明人： 旦野克典
- 申请人： 丰田自动车株式会社
- 申请人地址： 日本爱知县
- 专利权人： 丰田自动车株式会社
- 当前专利权人： 丰田自动车株式会社
- 当前专利权人地址： 日本爱知县
- 代理机构： 中国国际贸易促进委员会专利商标事务所
- 代理人： 李英
- 优先权： 2015-244233 20151215 JP
- 主分类号： C30B29/36
- IPC分类号： C30B29/36 ; C30B11/00
A SiC single crystal comprising no polycrystals, and no cracking other than at the side edges is provided. A method for producing SiC single crystal in which seed crystal held at bottom end face of holding shaft is contacted with Si-C solution having temperature gradient to grow SiC single crystal, wherein the contour of the end face of the holding shaft is smaller than the contour of the top face of the seed crystal, the top face of the seed crystal has center section held in contact with the entire surface of the end face of the holding shaft and outer peripheral section that is not in contact with the end face of the holding shaft, and carbon sheet is disposed on the top face of the seed crystal so as to cover at least the outer peripheral section, among the center section and the outer peripheral section.
公开/授权文献:
- CN106884205B SiC单晶及其制造方法 公开/授权日：2019-05-07