基本信息:
- 专利标题： 超大尺寸多层单晶石墨烯和大尺寸单晶铜镍合金的制备方法
- 专利标题（英）：Preparation method for oversized multilayer single crystal graphene and large-size single crystal copper nickel alloy
- 申请号：CN201710028076.9 申请日：2017-01-12
- 公开(公告)号：CN106835260A 公开(公告)日：2017-06-13
- 发明人： 张智宏 , 徐小志 , 吴慕鸿 , 俞大鹏 , 王恩哥 , 刘开辉
- 申请人： 北京大学
- 申请人地址： 北京市海淀区颐和园路5号
- 专利权人： 北京大学
- 当前专利权人： 北京大学
- 当前专利权人地址： 北京市海淀区颐和园路5号
- 代理机构： 北京万象新悦知识产权代理事务所
- 代理人： 张肖琪
- 主分类号： C30B1/02
- IPC分类号： C30B1/02 ; C30B25/00 ; C30B29/52 ; C30B29/02 ; C30B29/64
The invention provides a preparation method for oversized multilayer single crystal graphene and large-size single crystal copper nickel alloy. The method comprises the following steps: taking nickel plated single crystal copper foil as a raw material; utilizing annealing to prepare oversized single crystal copper nickel alloy; utilizing a normal pressure chemical vapor deposition method and taking the single crystal copper nickel alloy as a substrate, thereby acquiring the oversized high-quality multilayer single crystal graphene. According to the method provided by the invention, the large-size single crystal copper nickel alloy is acquired according to a simple method; the regulating effect of the substrate is utilized to prepare the oversized multilayer single crystal graphene; the technical problems of small single crystal size and complex growth process of the multilayer graphene growth are solved; the preparation for high-quality oversized multilayer single crystal graphene sample and single crystal copper nickel alloy can be realized according to a simple method.
公开/授权文献:
- CN106835260B 超大尺寸多层单晶石墨烯和大尺寸单晶铜镍合金的制备方法 公开/授权日：2019-01-29