The invention relates to a photoelectric device comprising a composite substrate, a main device body structure, and a drive chip. The composite substrate consists of a silicon substrate layer and a sapphire substrate layer bonded to the silicon substrate layer; the main device body structure is formed on the sapphire substrate layer; and the drive chip is arranged at one side, far away from the sapphire substrate layer, of the silicon substrate layer. According to the photoelectric device, with the composite substrate formed by bonding of the sapphire substrate layer and the silicon substrate layer, a high-quality epitaxial layer, like a high-quality gallium nitride layer, can grow on the sapphire substrate layer, so that the high-quality main device body structure can be formed and thus the photoelectric device with excellent performances can be manufactured. Meanwhile, with utilization of the composite substrate, the requirement of the large-dimension mainstream production line can be met and compatibility with the existing silicon substrate process is realized. Besides, usage of a large-size sapphire piece can be avoided and the cost of the photoelectric device can be lowered effectively.