基本信息:
- 专利标题： 功率半导体模块以及功率部件
- 专利标题（英）：Power semiconductor module and power unit
- 申请号：CN201480073732.1 申请日：2014-11-05
- 公开(公告)号：CN106415833A 公开(公告)日：2017-02-15
- 发明人： 曾田真之介
- 申请人： 三菱电机株式会社
- 申请人地址： 日本东京
- 专利权人： 三菱电机株式会社
- 当前专利权人： 三菱电机株式会社
- 当前专利权人地址： 日本东京
- 代理机构： 中国国际贸易促进委员会专利商标事务所
- 代理人： 金春实
- 优先权： 2014-033079 2014.02.24 JP
- 国际申请： PCT/JP2014/079319 2014.11.05
- 国际公布： WO2015/125352 JA 2015.08.27
- 进入国家日期： 2016-07-21
- 主分类号： H01L25/07
- IPC分类号： H01L25/07 ; H01L23/28 ; H01L25/18
Disclosed is a power semiconductor module wherein: a plurality of semiconductor element substrates are disposed on a same surface, each of said semiconductor element substrates having an insulating substrate, which has a front surface electrode formed on one surface of a substrate formed of an insulating material, and a rear surface electrode formed on the other surface, and a power semiconductor element that is bonded to the front surface of the front surface electrode; a wiring member that electrically connects between the semiconductor element substrates adjacent to each other is provided; and the semiconductor element substrates and the wiring member are molded by means of a mold resin such that at least all of the disposed rear surface electrodes are exposed. The mold resin has a recessed section between the adjacent insulating substrates, said recessed section having a predetermined depth from the rear surface electrode side, and not being filled with the resin that constitutes the mold resin.
公开/授权文献:
- CN106415833B 功率半导体模块以及功率部件 公开/授权日：2019-02-26
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/04 | ..不具有单独容器的器件 |
| ------------H01L25/07 | ...包含在H01L29/00组类型的器件 |