
基本信息:
- 专利标题: 一种薄膜晶体管、阵列基板、显示面板及显示装置
- 专利标题(英):Thin film transistor, array substrate, display panel and display device
- 申请号:CN201611030788.6 申请日:2016-11-16
- 公开(公告)号:CN106298962A 公开(公告)日:2017-01-04
- 发明人: 杨璐 , 王文涛 , 司晓文 , 徐海峰 , 王金锋 , 闫雷 , 姚磊 , 李峰
- 申请人: 京东方科技集团股份有限公司 , 鄂尔多斯市源盛光电有限责任公司
- 申请人地址: 北京市朝阳区酒仙桥路10号
- 专利权人: 京东方科技集团股份有限公司,鄂尔多斯市源盛光电有限责任公司
- 当前专利权人: 京东方科技集团股份有限公司,鄂尔多斯市源盛光电有限责任公司
- 当前专利权人地址: 北京市朝阳区酒仙桥路10号
- 代理机构: 北京银龙知识产权代理有限公司
- 代理人: 许静; 刘伟
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/06 ; H01L27/12
The invention provides a thin film transistor, an array substrate, a display panel and a display device, and relates to the technical field of display. The thin film transistor comprises a grid electrode, a grid insulation layer, a source electrode, a drain electrode and an active layer located on a substrate. The thin film transistor is characterized in that the projection of the grid electrode on the substrate and the projection of the active layer on the substrate have a plurality of independent overlapped areas. According to the scheme, the grid electrode and the active layer of the thin film transistor have the multiple independent overlapped areas, one thin film transistor structure equivalently forms a plurality switches in principle, due to the design, leak current of the thin film transistor can be effectively lowered, meanwhile, influences caused by the leak current on the performance of the thin film transistor can be reduced, and therefore the poor phenomenon that a display frame of a display product shakes can be improved when the thin film transistor is applied to the display product.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/78 | .....由绝缘栅产生场效应的 |
------------------H01L29/786 | ......薄膜晶体管 |