基本信息:
- 专利标题： 半导体发光装置及光半导体安装用基板
- 专利标题（英）：Semiconductor light-emitting device and optical-semiconductor-mounting substrate
- 申请号：CN201580017903.3 申请日：2015-03-27
- 公开(公告)号：CN106133929A 公开(公告)日：2016-11-16
- 发明人： 木村安希 , 坂寄胜哉 , 天下井惠维 , 管家了 , 坂井俊之 , 财部俊正 , 沟尻诚
- 申请人： 大日本印刷株式会社
- 申请人地址： 日本东京都
- 专利权人： 大日本印刷株式会社
- 当前专利权人： 大日本印刷株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京市柳沈律师事务所
- 代理人： 沈雪
- 优先权： 2014-074828 2014.03.31 JP; 2015-017933 2015.01.30 JP
- 国际申请： PCT/JP2015/059784 2015.03.27
- 国际公布： WO2015/152097 JA 2015.10.08
- 进入国家日期： 2016-09-30
- 主分类号： H01L33/60
- IPC分类号： H01L33/60
A semiconductor light-emitting device comprising, at least, a substrate, a reflector that has a concave cavity, and an optical semiconductor element. Said semiconductor light-emitting device is characterized in that: the reflector is made from a resin composition that contains an inorganic substance; the ratio (P1/P2) of the intensity (P1) of the highest-intensity diffraction peak in the range of diffraction angles (2theta) from 0 degree to 24 degrees in a spectrum obtained by measuring the reflector via X-ray diffractometry using Cu K-alpha radiation (the wavelength of which is 1.5418A) to the intensity (P2) of the highest-intensity diffraction peak in the range of diffraction angles (2theta) from 24 degrees to 70 degrees in said spectrum is between 0.01 and 1.0, inclusive; and the ash content of the reflector is at least 60% by mass. An optical-semiconductor-mounting substrate and a semiconductor light-emitting device provided with a reflector that exhibits extremely high reflectivity and excellent dimensional stability can be provided.
公开/授权文献:
- CN106133929B 半导体发光装置及光半导体安装用基板 公开/授权日：2018-10-26