基本信息:
- 专利标题： 用于微光刻投射曝光设备的照明装置的EUV光源
- 专利标题（英）：Euv light source for a lighting device of a microlithographic projection exposure apparatus
- 申请号：CN201580015584.2 申请日：2015-02-27
- 公开(公告)号：CN106133609A 公开(公告)日：2016-11-16
- 发明人： M.帕特拉
- 申请人： 卡尔蔡司SMT有限责任公司
- 申请人地址： 德国上科亨
- 专利权人： 卡尔蔡司SMT有限责任公司
- 当前专利权人： 卡尔蔡司SMT有限责任公司
- 当前专利权人地址： 德国上科亨
- 代理机构： 北京市柳沈律师事务所
- 代理人： 陈钘; 张邦帅
- 优先权： 102014205579.2 2014.03.26 DE
- 国际申请： PCT/EP2015/054175 2015.02.27
- 国际公布： WO2015/144386 DE 2015.10.01
- 进入国家日期： 2016-09-22
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H05H7/04 ; H05G2/00 ; H01S3/09 ; H01F7/00
The invention relates to an EUV light source for a lighting device of a microlithographic projection exposure apparatus, wherein the EUV light source has an electron source (110) for generating an electron beam, an accelerator unit (120) for accelerating this electron beam and an undulator arrangement (100) for generating EUV light by deflecting the electron beam, wherein this undulator arrangement (100) has a first undulator (101) for generating EUV light having a first polarization state and at least one second undulator (102) for generating EUV light having a second polarization state, wherein the second polarization state differs from the first polarization state, wherein the second undulator (102) is arranged after the first undulator (101) along the propagation direction of the electron beam, and wherein the undulator arrangement (100) is configured in such a way that said undulator arrangement has a first operating mode, in which the first undulator (101) is at saturation in respect of the generation of EUV light, and at least one second operating mode, in which the first undulator (101) is not at saturation in respect of the generation of EUV light.
公开/授权文献:
- CN106133609B 用于微光刻投射曝光设备的照明装置的EUV光源 公开/授权日：2018-03-16