基本信息:
- 专利标题： 一种碳化硅基复相陶瓷材料及其制备方法
- 专利标题（英）：Silicon carbide-based composite ceramic material and preparation method thereof
- 申请号：CN201610410680.3 申请日：2016-06-13
- 公开(公告)号：CN106083057A 公开(公告)日：2016-11-09
- 发明人： 陈健 , 陈军军 , 黄政仁 , 陈忠明 , 刘学建
- 申请人： 中国科学院上海硅酸盐研究所
- 申请人地址： 上海市长宁区定西路1295号
- 专利权人： 中国科学院上海硅酸盐研究所
- 当前专利权人： 中国科学院上海硅酸盐研究所
- 当前专利权人地址： 上海市长宁区定西路1295号
- 代理机构： 上海瀚桥专利代理事务所
- 代理人： 曹芳玲; 郑优丽
- 主分类号： C04B35/565
- IPC分类号： C04B35/565 ; C04B41/88
The invention relates to a silicon carbide-based composite ceramic material and a preparation method thereof. The silicon carbide-based composite ceramic material comprises a silicon carbide matrix material and a ZrB2 second phase material, and the content of the ZrB2 second phase material is not lower than 20 wt%, and preferably 20-40 wt%. Silicon carbide-based composite ceramic produced by using the silicon carbide-based composite ceramic material has linear volt-ampere characteristic, adjustable resistivity, high strength and hardness, and low density, and is hopeful to be greatly applied to the fields of structure and function integrated resistor elements. The SiC/ZrB2 composite ceramic is hopeful to become a structure and function integrated electronic industrial element running in ultrahigh temperature, strong acid, strong alkali and other strict environments. The method is normal pressure sintering, ad allows structured ceramic with different shapes and dimensions to be produced.
公开/授权文献:
- CN106083057B 一种碳化硅基复相陶瓷材料及其制备方法 公开/授权日：2018-12-07