The invention relates to the technical field of sensor processing, and especially relates to an MEMS acceleration sensor manufactured based on an MEMS processing technology. The MEMS acceleration sensor comprises a silicon substrate, a first predetermined cavity in the silicon substrate and a dangling silicon film above the first predetermined cavity, at least one second predetermined cavity and a dangling silicon film above the at least one second predetermined cavity, and a semiconductor doped resistor electrically connected with a conductive line. A first connector and a first release groove are formed above the first predetermined cavity. A limiting baffle, a second release groove and a second connector are formed above the second predetermined cavity. The first release groove and the second release groove are combined to form a dangling release structure. One end of the limiting baffle is connected with the silicon substrate, and the other end is freely dangling. One end of the first connector and one end of the second connector are connected with the silicon substrate, and the other end of the first connector and the other end of the second connector are connected with the dangling silicon film above the first predetermined cavity. Precise limiting overload protection is achieved through the limiting baffle in the dangling release structure. The MEMS acceleration sensor has a simple structure, and is easy to process.