基本信息:
- 专利标题： 多晶硅料的筛选及装填坩埚的方法
- 专利标题（英）：Polycrystalline silicon material screening and crucible filling method
- 申请号：CN201610364027.8 申请日：2016-05-30
- 公开(公告)号：CN105887192A 公开(公告)日：2016-08-24
- 发明人： 沈思情 , 刘浦锋 , 宋洪伟 , 陈猛
- 申请人： 上海超硅半导体有限公司
- 申请人地址： 上海市松江区石湖荡镇养石路88号
- 专利权人： 上海超硅半导体有限公司
- 当前专利权人： 上海超硅半导体股份有限公司
- 当前专利权人地址： 上海市松江区石湖荡镇养石路88号
- 主分类号： C30B29/06
- IPC分类号： C30B29/06 ; C30B15/00 ; B07B1/28 ; B07B1/46
The invention provides a polycrystalline silicon material screening and crucible filling method. The method is characterized in that a vibration screen is utilized for carrying out multi-layer screening on a polycrystalline silicon material, the screened-out polycrystalline silicon material is directly added into a quartz crucible according to specifications and dimensions, in-situ quartz crucible filling is achieved, operation time is shortened, working efficiency is improved, the dimension range of the polycrystalline silicon material can be precisely controlled, the crucible filling density is improved, influences caused by gas and pinholes on crystal ingot quality in the crystal growth process are reduced, and crystal ingot quality is improved; in addition, the problem that crystal ingot quality is affected by pollution caused by hand charging can be avoided.
公开/授权文献:
- CN105887192B 多晶硅料的筛选及装填坩埚的方法 公开/授权日：2020-05-12