基本信息:
- 专利标题： 晶圆与晶圆接合的工艺及结构
- 专利标题（英）：Wafer and Wafer Bonding Process and Structures
- 申请号：CN201510971451.4 申请日：2015-12-22
- 公开(公告)号：CN105742193A 公开(公告)日：2016-07-06
- 发明人： 余振华 , 陈明发 , 蔡文景
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹
- 代理机构： 北京德恒律治知识产权代理有限公司
- 代理人： 章社杲; 李伟
- 优先权： 62/096,972 2014.12.26 US; 14/712,729 2015.05.14 US
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L25/07 ; H01L23/538
Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.
公开/授权文献:
- CN105742193B 晶圆与晶圆接合的工艺及结构 公开/授权日：2019-01-25
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/56 | ....封装，例如密封层、涂层 |