基本信息:
- 专利标题： 测量处理装置及方法、基板处理系统、测量用工具
- 专利标题（英）：Measurement processing device and method, substrate processing system and measurement tool
- 申请号：CN201510846534.0 申请日：2015-11-26
- 公开(公告)号：CN105632976A 公开(公告)日：2016-06-01
- 发明人： 天野嘉文 , 伊藤优树 , 冈本英一郎 , 岩永和也 , 池边亮二
- 申请人： 东京毅力科创株式会社
- 申请人地址： 日本东京都
- 专利权人： 东京毅力科创株式会社
- 当前专利权人： 东京毅力科创株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京林达刘知识产权代理事务所
- 代理人： 刘新宇
- 优先权： 2014-238697 2014.11.26 JP
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
Provided are a measurement processing device and method, a substrate processing system and a measurement tool. A film removal state of a substrate and a holding state of an enclosure member can be configured in a short time without causing a large size of a system. First, second and third cameras (601-603) arranged above the enclosure member (302) are utilized to shoot a wafer on which a processing film is removed from a peripheral edge portion and an enclosure member (302). In a measurement processing device (800), captured images obtained by the cameras are processed to measure a cut width in which the processing film is absent in the peripheral edge portion of the wafer (W), and a gap width between a peripheral edge end of the wafer (W) and the enclosure member (302).
公开/授权文献:
- CN105632976B 测量处理装置及方法、基板处理系统、测量用工具 公开/授权日：2019-09-17
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |