The present disclosure provides a method of forming a nanoscale conductive film. The method comprises providing a nanoscale base film, forming a first patterned insulating layer on the nanoscale base film, and etching the nanoscale base film in a current generation system, using the first patterned insulating layer as a mask. The nanoscale base film includes a substrate, a first overcoat on one side of the substrate, and a first nano material layer laminated between the substrate and the first overcoat. The first patterned insulating layer is formed on the first overcoat, exposing portions of the first overcoat. In the first nano material layer, first regions are masked by the first insulating layer and second regions are not masked by the first insulating layer. The first regions and the second regions are electrically isolated from each other after etching the nanoscale base film in the current generation system.