
基本信息:
- 专利标题: 晶圆键合的方法以及晶圆的键合部件
- 申请号:CN201410439755.1 申请日:2014-08-30
- 公开(公告)号:CN105374741B 公开(公告)日:2019-07-02
- 发明人: 王伟 , 郑超
- 申请人: 中芯国际集成电路制造(上海)有限公司
- 申请人地址: 上海市浦东新区张江路18号
- 专利权人: 中芯国际集成电路制造(上海)有限公司
- 当前专利权人: 中芯国际集成电路制造(上海)有限公司
- 当前专利权人地址: 上海市浦东新区张江路18号
- 代理机构: 北京集佳知识产权代理有限公司
- 代理人: 高静; 骆苏华
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/48
The invention provides a wafer bonding method and a bonding component of a wafer. The wafer bonding method comprises the following steps of forming a plurality of first embossments on a first fitting end surface of a first wafer, wherein first gaps are arranged among the plurality of first embossments; forming a plurality of second embossments on a second fitting end surface of a second wafer, wherein second gaps are arranged among the plurality of second embossments; the second gaps can accommodate the first embossments and the first gaps can accommodate the second embossments; and carrying out bonding technology on the first wafer and the second wafer. Sizes of the first embossments and the second embossments are smaller than sizes of a first fitting end and a second fitting end so that a contact surface between the first fitting end and the second fitting end is divided into a plurality of contact surfaces with small sizes. Because of depressions of first embossment surfaces and second embossment surfaces, a proportion of a key and a gap on the contact surface is reduced and an actual contact surface of the first fitting end and the second fitting end is effectively increased so that connection quality between the wafers is increased.
公开/授权文献:
- CN105374741A 晶圆键合的方法以及晶圆的键合部件 公开/授权日:2016-03-02
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/768 | ...利用互连在器件中的分离元件间传输电流 |