
基本信息:
- 专利标题: 模块化多电平换流器高压直流输电系统子模块触发方法
- 专利标题(英):Submodule triggering methods for high-voltage direct-current transmission system of modular multilevel converter
- 申请号:CN201510989531.2 申请日:2015-12-24
- 公开(公告)号:CN105356731A 公开(公告)日:2016-02-24
- 发明人: 吴延坤 , 马玉龙 , 陈东 , 石岩 , 厉璇 , 蒲莹 , 卢亚军 , 尹健 , 张云晓 , 和敬涵 , 黄威博
- 申请人: 国家电网公司 , 国网北京经济技术研究院 , 北京交通大学
- 申请人地址: 北京市西城区西长安街86号
- 专利权人: 国家电网公司,国网北京经济技术研究院,北京交通大学
- 当前专利权人: 国家电网公司,国网北京经济技术研究院,北京交通大学
- 当前专利权人地址: 北京市西城区西长安街86号
- 代理机构: 北京纪凯知识产权代理有限公司
- 代理人: 徐宁; 孙楠
- 主分类号: H02M1/088
- IPC分类号: H02M1/088 ; H02M7/49 ; H02M1/36
The invention relates to submodule triggering methods for a high-voltage direct-current transmission system of a modular multilevel converter. The methods comprise a triggering method for a startup stage and a triggering method for a stable operation stage, wherein the triggering method for the startup stage adopts an auxiliary power supply assisted separate excitation type startup triggering method or an alternating current self-excitation startup triggering method; the triggering method for the stable operation stage comprises steps as follows: direct current energy-storage capacitor voltage of submodules is subjected to capacitor voltage sorting, and capacitor voltage sequences and corresponding sequence voltage values are obtained; meanwhile, a ratio of a bridge arm voltage modulating wave to a direct current energy-storage capacitor voltage rated value is rounded, and the number of the to-be-conducted submodules in a bridge arm at any time is obtained; a sort algorithm based capacitor voltage balance control direct method is adopted to perform capacitor voltage amplitude sorting on the capacitor voltage sequences and corresponding sequence voltage values, and triggering signals of the to-be-conducted submodules are generated according to the flowing direction of bridge arm current; IGBTs (insulated gate bipolar translators) in the submodules are subjected to gating according to IGBT gating signal modules of the submodules.