![集成电路结构](/CN/2015/1/124/images/201510622440.jpg)
基本信息:
- 专利标题: 集成电路结构
- 专利标题(英):Integrated circuit structure
- 申请号:CN201510622440.5 申请日:2010-06-09
- 公开(公告)号:CN105355594A 公开(公告)日:2016-02-24
- 发明人: 陈家忠 , 陈硕懋 , 郭晋玮 , 刘莎莉
- 申请人: 台湾积体电路制造股份有限公司
- 申请人地址: 中国台湾新竹市
- 专利权人: 台湾积体电路制造股份有限公司
- 当前专利权人: 台积电(中国)有限公司
- 当前专利权人地址: 中国台湾新竹市
- 代理机构: 隆天知识产权代理有限公司
- 代理人: 郝新慧; 章侃铱
- 优先权: 61/187,796 2009.06.17 US; 12/715,071 2010.03.01 US
- 分案原申请号: 2010102013525 2010.06.09
- 主分类号: H01L21/8224
- IPC分类号: H01L21/8224 ; H01L27/02 ; H01L27/082 ; H01L27/12 ; H01L29/06 ; H01L29/735
An integrated circuit structure is provided and includes a well region of a first conductivity type, an emitter of a second conductivity type opposite the first conductivity type over the well region, a collector of the second conductivity type over the well region and substantially encircling the emitter, and a base contact of the first conductivity type over the well region. The base contact is horizontally spaced apart from the emitter by the collector. At least one conductive strip horizontally spaces the emitter, the collector, and the base contact apart from each other. A dielectric layer is directly under, and contact with the at least one conductive strip. The invention has high RF frequency and high current gain, and results in reduction of flicker noise and process cost.
公开/授权文献:
- CN105355594B 集成电路结构 公开/授权日:2018-11-16
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置;专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
--------------H01L21/782 | ....制造多个器件,每一个由单个电路元件组成 |
----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
------------------H01L21/8222 | ......双极工艺 |
--------------------H01L21/8224 | .......由垂直和横向晶体管组合构成 |