基本信息:
- 专利标题： 瞬时电压抑制元件及其制造方法
- 申请号：CN201510261083.4 申请日：2015-05-21
- 公开(公告)号：CN105280631B 公开(公告)日：2018-04-10
- 发明人： 黄宗义 , 罗国轩 , 翁武得
- 申请人： 立锜科技股份有限公司
- 申请人地址： 中国台湾新竹县竹北市
- 专利权人： 立锜科技股份有限公司
- 当前专利权人： 立锜科技股份有限公司
- 当前专利权人地址： 中国台湾新竹县竹北市
- 代理机构： 中原信达知识产权代理有限责任公司
- 代理人： 陈肖梅; 谢丽娜
- 优先权： 62/011,795 2014.06.13 US
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L29/861 ; H01L29/866 ; H01L21/82
The present invention discloses a transient voltage suppression (TVS) device and a manufacturing method thereof. The TVS device limits a voltage drop between two terminals thereof not to exceed a clamp voltage. The TVS device is formed in a stack substrate including a semiconductor substrate, a P-type first epitaxial layer, and a second epitaxial layer stacked in sequence. In the TVS device, a first PN diode is connected to a Zener diode in series, wherein the series circuit is surrounded by a first shallow trench isolation (STI) region; and a second PN diode is connected in parallel to the series circuit, wherein the second PN diode is surrounded by a second STI region. The first STI region and the second STI region both extend from an upper surface to the second epitaxial layer, but not to the first epitaxial layer.
公开/授权文献:
- CN105280631A 瞬时电压抑制元件及其制造方法 公开/授权日：2016-01-27