The invention relates to a high-air-pressure thermal-annealing hybrid bonding method. The high-air-pressure thermal-annealing hybrid bonding method comprises the steps that: pre-bonding of two wafers is completed in an normal temperature and normal pressure environment to obtain a pre-bonded wafer; and the pre-bonded wafer is subjected to thermal annealing in a high air pressure environment, a thermal expansion force of wafer bonding interfaces in thermal annealing is counteracted by utilizing the high air pressure condition, thereby realizing stable bonding to the two wafers. The high-air-pressure thermal-annealing hybrid bonding method can weaken the influence of difference between thermal expansion coefficients of metal and an insulating substance on the hybrid bonding interfaces, so as to increase the success rate of bonding, and raises the limitation of the hybrid bonding technology on design, such as the area ratio of materials with different thermal expansion coefficients on the interfaces does not need to be considered.