
基本信息:
- 专利标题: 一种高气压热退火混合键合方法
- 专利标题(英):High-air-pressure thermal-annealing hybrid bonding method
- 申请号:CN201510354748.6 申请日:2015-06-24
- 公开(公告)号:CN105006441A 公开(公告)日:2015-10-28
- 发明人: 梅绍宁 , 程卫华 , 陈俊 , 朱继锋
- 申请人: 武汉新芯集成电路制造有限公司
- 申请人地址: 湖北省武汉市东湖开发区高新四路18号
- 专利权人: 武汉新芯集成电路制造有限公司
- 当前专利权人: 武汉新芯集成电路制造有限公司
- 当前专利权人地址: 湖北省武汉市东湖开发区高新四路18号
- 代理机构: 北京轻创知识产权代理有限公司
- 代理人: 陈薇
- 主分类号: H01L21/603
- IPC分类号: H01L21/603
The invention relates to a high-air-pressure thermal-annealing hybrid bonding method. The high-air-pressure thermal-annealing hybrid bonding method comprises the steps that: pre-bonding of two wafers is completed in an normal temperature and normal pressure environment to obtain a pre-bonded wafer; and the pre-bonded wafer is subjected to thermal annealing in a high air pressure environment, a thermal expansion force of wafer bonding interfaces in thermal annealing is counteracted by utilizing the high air pressure condition, thereby realizing stable bonding to the two wafers. The high-air-pressure thermal-annealing hybrid bonding method can weaken the influence of difference between thermal expansion coefficients of metal and an insulating substance on the hybrid bonding interfaces, so as to increase the success rate of bonding, and raises the limitation of the hybrid bonding technology on design, such as the area ratio of materials with different thermal expansion coefficients on the interfaces does not need to be considered.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/60 | ....引线或其他导电构件的连接,用于工作时向或由器件传导电流 |
----------------H01L21/603 | .....包括运用压力的,例如热压黏结 |