基本信息:
- 专利标题： 基板处理方法以及基板处理装置
- 专利标题（英）：Substrate treatment method and substrate treatment apparatus
- 申请号：CN201510131915.0 申请日：2015-03-25
- 公开(公告)号：CN104952699A 公开(公告)日：2015-09-30
- 发明人： 小林健司 , 奥谷学
- 申请人： 斯克林集团公司
- 申请人地址： 日本国京都府京都市
- 专利权人： 斯克林集团公司
- 当前专利权人： 斯克林集团公司
- 当前专利权人地址： 日本国京都府京都市
- 代理机构： 隆天知识产权代理有限公司
- 代理人： 宋晓宝; 向勇
- 优先权： 2014-062400 2014.03.25 JP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/67
A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.
公开/授权文献:
- CN104952699B 基板处理方法 公开/授权日：2018-06-12
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |