基本信息:
- 专利标题： 使用集成电路铸造相容工艺的单片集成电阻式存储器
- 专利标题（英）：Barrier structure for a silver based RRAM and method
- 申请号：CN201510067803.3 申请日：2015-02-09
- 公开(公告)号：CN104835911A 公开(公告)日：2015-08-12
- 发明人： S·纳拉亚南 , S·麦克斯维尔 , N·小瓦斯克斯 , H·Y·吉
- 申请人： 科洛斯巴股份有限公司
- 申请人地址： 美国加利福尼亚
- 专利权人： 科洛斯巴股份有限公司
- 当前专利权人： 昕原半导体（杭州）有限公司
- 当前专利权人地址： 311305 浙江省杭州市临安区青山湖街道崇文路1788号
- 代理机构： 北京戈程知识产权代理有限公司
- 代理人： 程伟; 王锦阳
- 优先权： 61/937,412 2014.02.07 US; 14/587,711 2014.12.31 US
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
The invention relates to a method for forming a resistive switching device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first wiring structure overlies the first dielectric material. The method forms a first electrode material overlying the first wiring structure and a resistive switching material comprising overlying the first electrode material. An active metal material is formed overlying the resistive switching material. The active metal material is configured to form an active metal region in the resistive switching material upon application of a thermal energy characterized by a temperature no less than about 100 Degree Celsius. In a specific embodiment, the method forms a blocking material interposing the active metal material and the resistive switching material to inhibit formation of the active metal region in the resistive switching material during the subsequent processing steps.
公开/授权文献:
- CN104835911B 使用集成电路铸造相容工艺的单片集成电阻式存储器 公开/授权日：2021-01-01