基本信息:
- 专利标题： 离子注入装置以及离子注入装置的控制方法
- 专利标题（英）：Ion implantation apparatus and method of controlling ion implantation apparatus
- 申请号：CN201410808396.2 申请日：2014-12-22
- 公开(公告)号：CN104810231A 公开(公告)日：2015-07-29
- 发明人： 大浦正英 , 今井大辅 , 二宫史郎
- 申请人： 斯伊恩股份有限公司
- 申请人地址： 日本东京都
- 专利权人： 斯伊恩股份有限公司
- 当前专利权人： 斯伊恩股份有限公司
- 当前专利权人地址： 日本东京都
- 代理机构： 永新专利商标代理有限公司
- 代理人： 胡建新; 朴勇
- 优先权： 2014-014584 2014.01.29 JP
- 主分类号： H01J37/317
- IPC分类号： H01J37/317
The present invention relates to an ion implantation apparatus and a method of controlling the ion implantation apparatus. An illustrative object of an aspect of the present invention is to provide a technique of protecting a power supply from an overcurrent caused by the generation of a load current. In an ion implantation apparatus (10), an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device (40) is provided at the downstream side of the interruption member in the beam line. A control unit (60) causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device (40). The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device (40). The control unit (60) may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.
公开/授权文献:
- CN104810231B 离子注入装置以及离子注入装置的控制方法 公开/授权日：2018-04-03
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01J | 放电管或放电灯 |
| ------H01J37/00 | 有把物质或材料引入使受到放电作用的结构的电子管,如为了对其检验或加工的 |
| --------H01J37/02 | .零部件 |
| ----------H01J37/317 | ..用于改变物体的特性或在其上加上薄层的，如离子注入 |