基本信息:
- 专利标题： 3DIC密封环结构及其形成方法
- 专利标题（英）：3DIC seal ring structure and methods of forming same
- 申请号：CN201410253422.X 申请日：2014-06-09
- 公开(公告)号：CN104779243A 公开(公告)日：2015-07-15
- 发明人： 何承颖 , 陈保同 , 王文德 , 刘人诚 , 杨敦年
- 申请人： 台湾积体电路制造股份有限公司
- 申请人地址： 中国台湾新竹
- 专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人： 台湾积体电路制造股份有限公司
- 当前专利权人地址： 中国台湾新竹
- 代理机构： 北京德恒律治知识产权代理有限公司
- 代理人： 章社杲; 孙征
- 优先权： 14/151,285 2014.01.09 US
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/31 ; H01L21/98
The present invention relates to a 3DIC seal ring structure and methods of forming same. The semiconductor device includes a first semiconductor chip including a first substrate, a plurality of first dielectric layers and a plurality of conductive lines formed in the first dielectric layers over the first substrate. The semiconductor device further includes a second semiconductor chip having a surface bonded to a first surface of the first semiconductor chip, the second semiconductor chip including a second substrate, a plurality of second dielectric layers and a plurality of second conductive lines formed in the second dielectric layers over the second substrate. The semiconductor device further includes a first conductive feature extending from the first semiconductor chip to one of the plurality of second conductive lines, and a first seal ring structure extending from the first semiconductor chip to the second semiconductor chip.
公开/授权文献:
- CN104779243B 3DIC密封环结构及其形成方法 公开/授权日：2018-02-23
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件，例如整流二极管的组装件 |
| ----------H01L25/04 | ..不具有单独容器的器件 |
| ------------H01L25/065 | ...包含在H01L27/00组类型的器件 |