基本信息:
- 专利标题： 改进的晶体硅的制造
- 申请号：CN201380038161.3 申请日：2013-05-15
- 公开(公告)号：CN104736746B 公开(公告)日：2018-02-02
- 发明人： 奥列格·费费洛夫 , 埃里克·绍尔 , 叶戈尔·弗拉基米罗夫
- 申请人： REC光能普特有限公司
- 申请人地址： 新加坡新加坡市
- 专利权人： REC光能普特有限公司
- 当前专利权人： REC光能普特有限公司
- 当前专利权人地址： 新加坡新加坡市
- 代理机构： 北京天昊联合知识产权代理有限公司
- 代理人： 丁业平; 金小芳
- 优先权： 1208611.2 2012.05.16 GB
- 国际申请： PCT/EP2013/060105 2013.05.15
- 国际公布： WO2013/171290 EN 2013.11.21
- 进入国家日期： 2015-01-16
- 主分类号： C30B11/14
- IPC分类号： C30B11/14 ; C30B29/06
A crystalline silicon ingot is produced using a directional solidification process. In particular, a crucible is loaded with silicon feedstock above a seed layer of uniform crystalline orientation. The silicon feedstock and an upper part of the seed layer are melted forming molten material in the crucible. This molten material is then solidified, during which process a crystalline structure based on that of the seed layer is formed in a silicon ingot. The seed layer is arranged such that a {110} crystallographic plane is normal to the direction of solidification and also so that a peripheral surface of the seed layer predominantly also lies in a {110} crystallographic plane. It is found that this arrangement offers a substantial improvement in the proportion of mono-crystalline silicon formed in the ingot as compared to alternative crystallographic orientations.
公开/授权文献:
- CN104736746A 改进的晶体硅的制造 公开/授权日：2015-06-24