A packaged Radio Frequency power transistor device (100, 200, 300, 400, 500) is described, which comprises (a) a component carrier (254, 256), (b) a die (110, 210a) comprising a semiconductor transistor having a source (112s), a gate (112g) and a drain (112d), wherein the die (110, 210a) is mounted at the component carrier (254, 256), (c) a ground connection (232a) being electrically connected to the source (112s), (d) an output lead (136, 236a) being electrically connected to the drain (112d), (e) a resonance circuit (122) being electrically inserted between the output lead (136, 236a) and the ground connection (232a), and (f) a video lead (134, 234) being electrically connected to the resonance circuit (122). The video lead (134, 234) is configured for being connected to a first contact of a decoupling capacitor (144, 244). The ground connection (232a) is configured for being connected to a second contact of the decoupling capacitor (144, 244). With respect to a reference plane being spanned by a bottom surface of the component carrier (254, 256) the output lead (136, 236a) and the video lead (234) are arranged at least approximately at the same height level. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device (100, 200, 300, 400, 500).