![用于硅基多晶硅膜沉积的气体传输装置及沉积方法](/CN/2013/1/127/images/201310638442.jpg)
基本信息:
- 专利标题: 用于硅基多晶硅膜沉积的气体传输装置及沉积方法
- 专利标题(英):Gas conveying device and deposition method for silica-based polycrystalline silicon membrane deposition
- 申请号:CN201310638442.4 申请日:2013-12-02
- 公开(公告)号:CN104674184A 公开(公告)日:2015-06-03
- 发明人: 徐继平 , 史训达 , 张硕 , 李耀东 , 刘斌 , 赵晶 , 王海涛 , 梁雨东 , 刘佐星
- 申请人: 有研新材料股份有限公司
- 申请人地址: 北京市西城区新街口外大街2号
- 专利权人: 有研新材料股份有限公司
- 当前专利权人: 有研半导体材料有限公司
- 当前专利权人地址: 北京市西城区新街口外大街2号
- 代理机构: 北京北新智诚知识产权代理有限公司
- 代理人: 刘秀青; 熊国裕
- 主分类号: C23C16/24
- IPC分类号: C23C16/24 ; C23C16/455 ; C30B25/14 ; C30B29/06
The invention discloses a gas conveying device and a deposition method for silica-based polycrystalline silicon membrane deposition. The gas conveying device comprises a main gas conveying tube, a central conduction tube and a secondary gas conveying tube, wherein the main gas conveying tube is a reducing pipe of which the diameter of the upper part is large and the diameter of the lower part is small; the upper end of the main gas conveying tube is sealed; a gas inlet is formed in the lower end of the main gas conveying tube; the secondary gas conveying tube is supported by a reinforcing rod; the upper end of the secondary gas conveying tube is sealed; the lower end of the secondary gas conveying tube is communicated with the part above the diameter variable part of the main gas conveying tube through the central conduction tube; a plurality of gas outlet holes are respectively formed in the side surfaces of the main gas conveying tube and the secondary gas conveying tube. The deposition method comprises the following steps: (1) loading the gas conveying device on a vertical furnace, and connecting the gas inlet with a mass flowmeter and a silane gas source; (2) setting the temperature, the deposition pressure and the silane flow inside a deposition cavity; and (3) introducing a silane gas, and depositing a polycrystalline silicon membrane on a silica-based substrate. The 8-inch silica-based polycrystalline silicon membrane deposited by using the gas conveying device and the deposition method disclosed by the invention is very good in impurity absorbing property, and the purposes of process simplification, quality improvement and cost reduction are achieved indeed.