基本信息:
- 专利标题： 贯通电极基板的制造方法
- 专利标题（英）：method for manufacturing the through electrode substrate
- 申请号：CN201510085056.6 申请日：2009-08-26
- 公开(公告)号：CN104617037A 公开(公告)日：2015-05-13
- 发明人： 前川慎志 , 铃木美雪
- 申请人： 大日本印刷株式会社
- 申请人地址： 日本东京都
- 专利权人： 大日本印刷株式会社
- 当前专利权人： 大日本印刷株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 北京尚诚知识产权代理有限公司
- 代理人： 龙淳
- 优先权： 2008-267870 2008.10.16 JP; 2009-194245 2009.08.25 JP
- 分案原申请号： 2009801300373 2009.08.26
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/14 ; H01L23/48 ; H01L23/498 ; H01L25/065 ; H01L25/16 ; H05K3/42
Disclosed is a through electrode substrate comprising a conduction part extended from the obverse surface of the substrate to the reverse surface of the substrate, the conduction part having improved electric characteristics. Also disclosed is a semiconductor device using the through electrode substrate. A through electrode substrate (100) comprises a substrate (102) having a through-hole (104) extended from the obverse surface of the substrate to the reverse surface of the substrate, and a conduction part (106) comprising a metal material filled into the through-hole (104). The conduction part (106) comprises at least a metal material having an area weighed average grain diameter of not less than 13 [mu]m. Further, the conduction part (106) comprises a metal material having a grain diameter of not less than 29 [mu]m. One end of the conduction part comprises a metal material having an area weighed average grain diameter of less than 13 [mu]m, and the other end of the conduction part comprises at least a metal material having an area weighed average grain diameter of not less than 13[mu]m.
公开/授权文献:
- CN104617037B 贯通电极基板的制造方法 公开/授权日：2018-04-24
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/768 | ...利用互连在器件中的分离元件间传输电流 |