The invention belongs to the power electronic technical field and relates to a semiconductor device, in particular, a terminal unit structure of a power electronic semiconductor chip and a manufacturing method of the terminal unit structure. The terminal unit structure comprises a first conductivity type substrate; a second conductivity type field limiting ring is arranged in a first main surface of the first conductivity type substrate; a first insulating layer is arranged on the first main surface of the first conductivity type substrate; two field plates are arranged on the first insulating layer and are located at two sides of the second conductivity type field limiting ring respectively; the field plates are provided with second insulating layers; the second insulating layers are provided with a metal field plate; the bottom of the metal field plate contacts with the second conductivity type field limiting ring; and the metal field plate covers the area of the second conductivity type field limiting ring and two sides of the second conductivity type field limiting ring. According to the terminal unit structure of the invention, structural improvement of the field plate is emphasized; and the field plates are connected with the second conductivity type field limiting ring, wherein the cut-off field plate can compress an electric field, and the stretching field plate can stretch the electric field, and therefore, so that the electric field can be distributed newly, and the electric field effect of the field limiting ring can be decreased.