The invention discloses a packaging structure of a GaN-based Schottky diode with the avalanche breakdown property. A device comprises two GaN-based Schottky diodes and a Si-based diode, wherein the reverse nominal voltages of the two GaN-based Schottky diodes are the same, and a parallel structure is formed by directly welding the Si-based diode to the cathodes of the GaN-based Schottky diodes and connecting the anodes of the two kinds of diodes through leads. In this way, when the device works reversely, reverse voltage is fixed through the avalanche breakdown effect of the Si-based diode under the condition that the reserve voltage exceeds the reverse nominal voltage of the device, and avalanche current is generated through the avalanche breakdown effect of the Si-based diode and is fed back to a protecting circuit. In this way, the device and a whole circuit system are protected, and both the safety and the stability of the device and the circuit are improved.