基本信息:
- 专利标题： 一种大直径区熔硅单晶的生长方法
- 专利标题（英）：Growing method of large diameter float zone silicon crystal
- 申请号：CN201410523050.8 申请日：2014-09-30
- 公开(公告)号：CN104328482A 公开(公告)日：2015-02-04
- 发明人： 沈浩平 , 王彦君 , 张雪囡 , 靳立辉 , 高树良 , 刘嘉 , 王遵义 , 刘铮 , 赵宏波 , 刘琨 , 郝大维 , 吴峰 , 楚占斌
- 申请人： 天津市环欧半导体材料技术有限公司
- 申请人地址： 天津市滨海新区高新区华苑产业园区(环外)海泰东路12号
- 专利权人： 天津市环欧半导体材料技术有限公司
- 当前专利权人： 天津市环欧半导体材料技术有限公司
- 当前专利权人地址： 天津市滨海新区高新区华苑产业园区(环外)海泰东路12号
- 代理机构： 天津滨海科纬知识产权代理有限公司
- 代理人： 杨慧玲
- 主分类号： C30B13/00
- IPC分类号： C30B13/00 ; C30B13/28 ; C30B29/06
The present invention provides a growing method of a large diameter float zone silicon crystal, wherein the growing method comprises: loading into a furnace, evacuating, inflating, preheating, melting a material, seeding, growing narrow neck, expanding shoulder, maintaining, growing in an equal diameter manner, ending, cooling, and removing and cleaning the furnace. According to the present invention, with control of the generator output power, the polycrystal material descending speed and other parameters, the problems of easy stacking caused by difficult melting of the large diameter polycrystal material, and the low crystal forming rate caused by the poor process repeatability, the dislocation produced during the shoulder expanding process and the like under the conditions of the original process and method are overcome, the crystal forming rate and the qualification rate of the large diameter float zone silicon crystal are increased, the labor intensity is reduced, and the repeatability and the reproducibility are good.