基本信息:
- 专利标题： 形成铂薄膜的方法
- 申请号：CN201410233903.4 申请日：2014-05-29
- 公开(公告)号：CN104213101B 公开(公告)日：2018-04-17
- 发明人： 帕特里克·皮埃特瑞兹 , 杨俊
- 申请人： 福特全球技术公司
- 申请人地址： 美国密歇根州迪尔伯恩市
- 专利权人： 福特全球技术公司
- 当前专利权人： 福特全球技术公司
- 当前专利权人地址： 美国密歇根州迪尔伯恩市
- 代理机构： 北京铭硕知识产权代理有限公司
- 代理人： 郭鸿禧; 刘灿强
- 优先权： 13/904,439 2013.05.29 US
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; H01M4/92 ; H01M4/88
In at least one embodiment, a method of forming a platinum thin film is provided, including performing a first atomic layer deposition (ALD) process on a substrate using a first platinum organometallic precursor in a first step and an oxidizing precursor in a second step to form an at least partially coated substrate. A second ALD process is then performed on the at least partially coated substrate using a second platinum organometallic precursor in a first step and a reducing precursor in a second step to form a thin film of platinum on the substrate. The first ALD process may be performed for 5 to 150 cycles to nucleate platinum on the substrate surface and the second ALD process may be performed thereafter to grow the thin film and remove surface oxides. A conformal platinum thin film having a thickness of 1 to 10 monolayers may be deposited.
公开/授权文献:
- CN104213101A 形成铂薄膜的方法 公开/授权日：2014-12-17