基本信息:
- 专利标题： 用于光电-Fenton处理系统的多孔膜阴极及其制备工艺
- 专利标题（英）：Porous membrane cathode for photoelectric-Fenton treating system, as well as preparation technology of porous member cathode
- 申请号：CN201410281461.0 申请日：2014-06-23
- 公开(公告)号：CN104071866A 公开(公告)日：2014-10-01
- 发明人： 丁爱中 , 谢恩 , 豆俊峰 , 郑蕾 , 许新宜
- 申请人： 北京师范大学
- 申请人地址： 北京市海淀区新街口外大街19号
- 专利权人： 北京师范大学
- 当前专利权人： 北京师范大学
- 当前专利权人地址： 北京市海淀区新街口外大街19号
- 主分类号： C02F1/461
- IPC分类号： C02F1/461 ; C02F1/32 ; C02F1/72
The invention discloses a porous membrane cathode for a photoelectric-Fenton treating system, as well as a preparation technology of the porous member cathode. The preparation technology comprises the following steps: pretreating graphite powder to obtain a substance B, and treating the substance B through a KNO3 water solution, a nonylphenol polyoxyethylene ether water solution, ethanol, tertbutyl alcohol and polytetrafluoroethylene emulsion to obtain cream A; smearing the cream A on one side of a treated nickel screen, and extruding to obtain a substance E; preparing a solution C; preparing a cream B from the substance B, a KNO3 water solution, a nonylphenol polyoxyethylene ether water solution, ethyl ether, methanol, 2-ethylanthraquinone, the solution C and the polytetrafluoroethylene emulsion; and smearing the cream B on the other side of the substance E, and extruding, forging and cooling to obtain the porous membrane cathode for the photoelectric-Fenton treating system.
公开/授权文献:
- CN104071866B 用于光电-Fenton处理系统的多孔膜阴极及其制备工艺 公开/授权日：2015-11-25
IPC结构图谱:
| C | 化学；冶金 |
| --C02 | 水、废水、污水或污泥的处理 |
| ----C02F | 水、废水、污水或污泥的处理 |
| ------C02F1/00 | 水、废水或污水的处理C02F3/00至C02F9/00优先 |
| --------C02F1/46 | .用电化学方法 |
| ----------C02F1/461 | ..用电解法 |