
基本信息:
- 专利标题: 具有冷却系统的喷头及具备该喷头的基板处理装置
- 专利标题(英):Cooling type showerhead and substrate processing apparatus having same
- 申请号:CN201280065269.7 申请日:2012-11-23
- 公开(公告)号:CN104025258A 公开(公告)日:2014-09-03
- 发明人: 梁日光 , 宋炳奎 , 金龙基 , 金劲勋 , 申良湜
- 申请人: 株式会社EUGENE科技
- 申请人地址: 韩国京畿道龙仁市
- 专利权人: 株式会社EUGENE科技
- 当前专利权人: 株式会社EUGENE科技
- 当前专利权人地址: 韩国京畿道龙仁市
- 代理机构: 北京北翔知识产权代理有限公司
- 代理人: 钟守期; 杨勇
- 优先权: 10-2012-0003106 2012.01.10 KR
- 国际申请: PCT/KR2012/009952 2012.11.23
- 国际公布: WO2013/105730 KO 2013.07.18
- 进入国家日期: 2014-06-27
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
The present invention relates to a cooling type showerhead and to a substrate processing apparatus having same. According to one embodiment of the present invention, the substrate processing apparatus has an opened upper portion and includes: a chamber body providing an inner space in which a process with respect to the substrate is performed; a chamber lid disposed on the upper portion of the chamber body for closing the upper portion of the chamber body; and a showerhead disposed on the lower portion of the chamber body to supply a reaction gas into the inner space. The showerhead contacts the chamber lid and includes: a flange recessed from the top surface of the showerhead to define a flow path through which a refrigerant flows; and a flat plate disposed inside the flange and having at least one injection hole for injecting the reaction gas along the thickness direction of the showerhead.
公开/授权文献:
- CN104025258B 具有冷却系统的喷头及具备该喷头的基板处理装置 公开/授权日:2017-03-01
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/20 | ....半导体材料在基片上的沉积,例如外延生长 |
----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的,即化学沉积 |