
基本信息:
- 专利标题: 复合基板及其制法
- 专利标题(英):Composite substrate and manufacturing method thereof
- 申请号:CN201380003307.0 申请日:2013-11-11
- 公开(公告)号:CN103999366A 公开(公告)日:2014-08-20
- 发明人: 堀裕二 , 多井知义 , 岩崎康范 , 山寺乔纮 , 服部良祐 , 铃木健吾
- 申请人: 日本碍子株式会社 , NGK陶瓷设备株式会社
- 申请人地址: 日本国爱知县名古屋市瑞穗区须田町2番56号
- 专利权人: 日本碍子株式会社,NGK陶瓷设备株式会社
- 当前专利权人: 日本碍子株式会社,NGK陶瓷设备株式会社
- 当前专利权人地址: 日本国爱知县名古屋市瑞穗区须田町2番56号
- 代理机构: 上海市华诚律师事务所
- 代理人: 李晓
- 优先权: 2012-250070 2012.11.14 JP
- 国际申请: PCT/JP2013/080398 2013.11.11
- 国际公布: WO2014/077212 JA 2014.05.22
- 进入国家日期: 2014-03-31
- 主分类号: H03H9/25
- IPC分类号: H03H9/25 ; H03H3/08
In this composite substrate, a piezoelectric substrate that is a single-crystal substrate of lithium tantalate or lithium niobate, and a support substrate that is a single-crystal substrate of silicon are joined together interposed by an Ar-containing amorphous layer. The amorphous layer includes a first layer, a second layer and a third layer from the piezoelectric substrate toward the composite substrate. The first layer contains more of the element (e.g., Ta) constituting the piezoelectric substrate than the second layer and the third layer, the second layer contains more of the element (Si) constituting the support substrate than the first layer and the second layer, and the second layer contains more Ar than the first layer and the third layer.
公开/授权文献:
- CN103999366B 复合基板及其制法 公开/授权日:2016-07-06
IPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03H | 阻抗网络,例如谐振电路;谐振器 |
------H03H9/00 | 包括机电或电声元件的网络,如谐振电路 |
--------H03H9/25 | .应用声表面波的谐振器的结构特点 |