![发光器件](/CN/2014/1/9/images/201410049684.jpg)
基本信息:
- 专利标题: 发光器件
- 申请号:CN201410049684.4 申请日:2014-02-13
- 公开(公告)号:CN103996675B 公开(公告)日:2017-01-18
- 发明人: 丁焕熙
- 申请人: LG伊诺特有限公司
- 申请人地址: 韩国首尔
- 专利权人: LG伊诺特有限公司
- 当前专利权人: LG伊诺特有限公司
- 当前专利权人地址: 韩国首尔
- 代理机构: 北京集佳知识产权代理有限公司
- 代理人: 顾晋伟; 吴鹏章
- 优先权: 10-2013-0016131 2013.02.15 KR
- 主分类号: H01L25/13
- IPC分类号: H01L25/13 ; H01L33/36 ; H01L33/62
A light emitting device according to the embodiment includes a first light emitting structure including a first conductive first semiconductor layer, a first active layer, and a second conductive second semiconductor layer; a second light emitting structure including a first conductive third semiconductor layer, a second active layer, and a second conductive fourth semiconductor layer; a first electrode electrically connected to the first conductive first semiconductor layer and disposed under the first light emitting structure; a second electrode electrically connected to the second conductive second semiconductor layer and disposed under the first light emitting structure; a third electrode electrically connected to the first conductive third semiconductor layer and disposed under the second light emitting structure; a fourth electrode electrically connected to the second conductive fourth semiconductor layer and disposed under the second light emitting structure; a first contact portion provided through the first light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive first semiconductor layer; a second contact portion electrically connected to the second and third electrodes; and a third contact portion provided through the second light emitting structure and including a first region electrically connected to the third electrode and a second region making contact with a top surface of the first conductive third semiconductor layer.
公开/授权文献:
- CN103996675A 发光器件 公开/授权日:2014-08-20
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
--------H01L25/03 | .所有包含在H01L27/00至H01L51/00各组中同一小组内的相同类型的器件,例如整流二极管的组装件 |
----------H01L25/04 | ..不具有单独容器的器件 |
------------H01L25/13 | ...包含在H01L33/00组类型的器件 |