The invention discloses magnetron sputtering equipment. The magnetron sputtering equipment comprises a film-forming chamber and a plurality of targets which are arranged into a queue; a first heating device opposite to the queue and used for heating a base plate is arranged inside the film-forming chamber; and a second heating device corresponding to gaps among the targets is arranged inside the film-forming chamber. According to the magnetron sputtering equipment disclosed by the invention, the second heating device or the third heating device is utilized, so that formed temperatures on the base plate are not uniform, and temperature difference among different areas on the base plate causes that attaching speed of atoms in different areas on the base plate is different, and therefore, film-forming velocity can be regulated to improve film-forming unevenness. And the magnetron sputtering equipment disclosed by the invention is simple in structure and can effectively prevent the film-forming unevenness on the surface of the substrate.