基本信息:
- 专利标题： 超薄功率晶体管和具有定制占位面积的同步降压变换器
- 申请号：CN201280028281.0 申请日：2012-04-09
- 公开(公告)号：CN103608917B 公开(公告)日：2016-11-16
- 发明人： J·A·赫尔嵩末 , O·J·洛佩斯 , J·A·浓趣勒
- 申请人： 德克萨斯仪器股份有限公司
- 申请人地址： 美国德克萨斯州
- 专利权人： 德克萨斯仪器股份有限公司
- 当前专利权人： 德克萨斯仪器股份有限公司
- 当前专利权人地址： 美国德克萨斯州
- 代理机构： 北京纪凯知识产权代理有限公司
- 代理人： 赵蓉民
- 优先权： 13/082,147 2011.04.07 US
- 国际申请： PCT/US2012/032788 2012.04.09
- 国际公布： WO2013/106050 EN 2013.07.18
- 进入国家日期： 2013-12-09
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L23/492
A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals. Encapsulation compound (130) filling the thickness difference between plate and strip, and spaces between chip and terminals, wherein the compound has a surface (101) coplanar with the plate surface (111) and the opposite surface (102) coplanar with the third pad (211) and the terminals (212; 212a), the distance (104) between the surfaces being equal to the sum of the first (110a) and third (210a) thicknesses.
公开/授权文献:
- CN103608917A 超薄功率晶体管和具有定制占位面积的同步降压变换器 公开/授权日：2014-02-26
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/482 | ..由不可拆卸地施加到半导体本体上的内引线组成的 |
| ------------H01L23/495 | ...引线框架的 |