基本信息:
- 专利标题： 受光元件
- 专利标题（英）：Light receiving element
- 申请号：CN201310258404.6 申请日：2010-07-21
- 公开(公告)号：CN103426966A 公开(公告)日：2013-12-04
- 发明人： 秋田胜史 , 石塚贵司 , 藤井慧 , 永井阳一
- 申请人： 住友电气工业株式会社
- 申请人地址： 日本大阪府大阪市
- 专利权人： 住友电气工业株式会社
- 当前专利权人： 住友电气工业株式会社
- 当前专利权人地址： 日本大阪府大阪市
- 代理机构： 中原信达知识产权代理有限责任公司
- 代理人： 苏卉; 车文
- 优先权： 2009-206288 2009.09.07 JP; 2009-206310 2009.09.07 JP
- 分案原申请号： 2010800054919 2010.07.21
- 主分类号： H01L31/101
- IPC分类号： H01L31/101 ; H01L31/18
The invention provides an adsorption element which can reduce dark currents. The adsorption element has a substrate, an adsorption layer, a diffusive-concentration distribution adjusting layer and a window layer, wherein the adsorption layer is disposed between the substrate and the diffusive-concentration distribution adjusting layer; and the diffusive-concentration distribution adjusting layer is disposed between the adsorption layer and the window layer. a semiconductor region including the window layer and the diffusive-concentration distribution adjusting layer comprises a first region and a second region, wherein the first region includes a predetermined impurity element and is in contact with the second region; the first region has p-type conductivity, and a maximum value of a concentration of n-type carrier in a predetermined region being not less than 5*10<15> cm<-3> and not more than 1*10<19> cm<-3>.