
基本信息:
- 专利标题: 3D磁传感器的形成方法
- 专利标题(英):Formation method of 3D magnetic sensor
- 申请号:CN201310314998.8 申请日:2013-07-24
- 公开(公告)号:CN103400934A 公开(公告)日:2013-11-20
- 发明人: 熊磊 , 奚裴 , 张振兴 , 王健鹏 , 时廷
- 申请人: 上海宏力半导体制造有限公司
- 申请人地址: 上海市浦东张江高科技园区祖冲之路1399号
- 专利权人: 上海宏力半导体制造有限公司
- 当前专利权人: 上海华虹宏力半导体制造有限公司
- 当前专利权人地址: 上海市浦东张江高科技园区祖冲之路1399号
- 代理机构: 北京集佳知识产权代理有限公司
- 代理人: 张亚利; 骆苏华
- 主分类号: H01L43/12
- IPC分类号: H01L43/12 ; G01R33/09
The invention discloses a formation method of a 3D magnetic sensor. The method comprises steps of providing a substrate, forming an insulating layer and a groove positioned in the insulating layer on the substrate, forming a magnetic material layer, ensuring that the magnetic material layer covers the insulating layer and the bottom and side walls of the groove, forming a TaN layer on the magnetic material layer, forming an etching blocking layer on the TaN layer, forming a filling material layer on the etching blocking layer, ensuring that the filling material layer is filled in the groove, forming a graphical photoresist layer on the filling material layer, taking the graphical photoresist layer as a mask, etching the filling material layer through plasma, taking the graphical photoresist layer as a mask to etch the etching blocking layer and the TaN layer, removing the graphical photoresist layer and the surplus filling material layer, and etching the magnetic material layer to form a magnetic resistance layer before or after the graphical photoresist layer and the surplus filling material layer are removed. The etching blocking layer blocks the plasma bombardment on the TaN layer during the process that the filling material layer is etched, so that good performances of the 3D magnetic sensor are guaranteed.
公开/授权文献:
- CN103400934B 3D磁传感器的形成方法 公开/授权日:2016-08-24
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L43/00 | 应用电—磁或者类似磁效应的器件;专门适用于制造或处理这些器件或其部件的方法或设备 |
--------H01L43/12 | .专门适用于制造或处理这些器件或其部件的方法或设备 |