The invention discloses a growing device and method of a semiconductor film. The growing device is suitable for the growth of the semiconductor film by using a chemical vapor deposition process. The growing device of the semiconductor film comprises a carrier gas device, a liquid source device, a growing chamber, a bypass and a vacuum system which are connected into a whole through pipelines according to a certain logic relationship, wherein all the pipelines can be independently opened or closed. The liquid source device comprises a plurality of source bottles, and is arranged in an inert gas control cabinet, the source bottles are arranged in a thermostatic bath, and a liquid-state source is conveyed to the growing chamber through using a carrier gas bubbling method, and is subjected to a chemical reaction in the growing chamber to synthesize the required semiconductor film. A carrier gas directly enters the growing chamber through a main pipeline, and an air source in the growing chamber is controlled through opening or closing the bypass so that the purposes of controlling the growth of the film and balancing the pressure of the growing chamber in the switching process are achieved.