基本信息:
- 专利标题： 阻气膜、其制造方法、电子装置用构件以及电子装置
- 专利标题（英）：Gas-barrier film, process for producing same, member for electronic device, and electronic device
- 申请号：CN201180055899.1 申请日：2011-09-16
- 公开(公告)号：CN103201109A 公开(公告)日：2013-07-10
- 发明人： 伊藤雅春 , 近藤健 , 铃木悠太
- 申请人： 琳得科株式会社
- 申请人地址： 日本东京都
- 专利权人： 琳得科株式会社
- 当前专利权人： 琳得科株式会社
- 当前专利权人地址： 日本东京都
- 代理机构： 中国专利代理(香港)有限公司
- 代理人： 蔡晓菡; 孟慧岚
- 优先权： 2010-211056 2010.09.21 JP
- 国际申请： PCT/JP2011/071203 2011.09.16
- 国际公布： WO2012/039355 JA 2012.03.29
- 进入国家日期： 2013-05-21
- 主分类号： B32B27/00
- IPC分类号： B32B27/00
The present invention provides a gas-barrier film which comprises a base layer and a gas-barrier layer formed on at least one surface of the base layer, wherein the base layer comprises a resin having a glass transition temperature (Tg) exceeding 130 C and the gas-barrier layer is constituted of a material containing at least oxygen and silicon atoms and has a surface-layer part in which the proportions of oxygen atoms, nitrogen atoms, and silicon atoms in all the oxygen atoms, nitrogen atoms, and silicon atoms are 60-75%, 0-10%, and 25-35%, respectively, and which has a film density of 2.4-4.0 g/cm3. Also provided are a process for producing the gas-barrier film, a member for electronic devices which comprises the gas-barrier film, and an electronic device equipped with the member for electronic devices. According to the present invention, the gas-barrier film is excellent in terms of all of gas-barrier properties, transparency, flex resistance, and heat resistance.
公开/授权文献:
- CN103201109B 阻气膜、其制造方法、电子装置用构件以及电子装置 公开/授权日：2014-10-22
IPC结构图谱:
| B | 作业；运输 |
| --B32 | 层状产品 |
| ----B32B | 层状产品，即由扁平的或非扁平的薄层，例如泡沫状的、蜂窝状的薄层构成的产品 |
| ------B32B27/00 | 实质上由合成树脂组成的层状产品 |