The invention relates to a patch type diode device structure. The patch type diode device structure comprises a first lead strip, a second lead strip, a connecting piece and a diode chip which are arranged in an epoxy packaging body, wherein a first bending position is arranged in an area between a support area of the first lead strip and a pin area, so that the support area of the first lead strip is lower than the pin area; a second bending position is arranged in an area between a welding area of the second lead strip and the pin area, so that the welding area of the second lead strip is lower than the pin area; a third bending position is arranged between a first welding end and a second welding end of the connecting piece, so that the first welding end is lower than the second welding end; a protrusion portion with thickness smaller than that of the pin area is arranged on the lower surface of the epoxy packaging body; and a plurality of through holes are arranged between the third bending position and the second welding end. The patch type diode device structure eliminates the possibility that a pin suspension degree is below a lower limit, so that product yield loss caused by an ultra lower limit of a suspension degree value in case of unit abnormality and product abnormality caused by miss-judging are avoided.