The invention belongs to the technical field of production of semiconductor material thin-film transistors and relates to a production method of an alloy oxide thin-film transistor. After a P-type silicon substrate and an aluminum oxide ceramic target are placed in an existing pulse laser ablation device, the aluminum oxide ceramic target is subjected to pulse laser ablation and an aluminum oxide ceramic target film sample is formed on the P-type substrate by deposition. The surface of the Al2O3 ceramic target film sample is cleaned, ITZO (indium tin zinc oxide) semiconductor channel layer is made on the surface of a gate medium layer of the cleaned Al2O3 ceramic target film sample, TFT (thin film transistor) channels different in length and width are made by photoetching, and alloy semiconductor film channel layer material is deposited on a high-k gate medium layer at room temperature by radio frequency magnetron sputtering technology. Ni is deposited at room temperature by ion beam sputtering technology to form a source electrode and a drain electrode. The source electrode and the drain electrode are obtained after photoresist is stripped, and the alloy oxide thin-film transistor is obtained after annealing. The production process is simple, the principle is reliable, production performance is fine, production is environment-friendly, and the production method is low in cost and widely applicable.