基本信息:
- 专利标题： 基于超薄纳米线和基于纳米级异质结构的热电转换结构及其制备方法
- 专利标题（英）：Ultrathin nanowire-based and nanoscale heterostructure-based thermoelectric conversion structures and method of making same
- 申请号：CN201180020572.0 申请日：2011-04-25
- 公开(公告)号：CN102985359A 公开(公告)日：2013-03-20
- 发明人： 吴越 , 张根强
- 申请人： 普度研究基金会
- 申请人地址： 美国印第安纳州
- 专利权人： 普度研究基金会
- 当前专利权人： 普度研究基金会
- 当前专利权人地址： 美国印第安纳州
- 代理机构： 北京律盟知识产权代理有限责任公司
- 代理人： 刘国伟
- 优先权： 61/327,199 2010.04.23 US; 61/327,192 2010.04.23 US
- 国际申请： PCT/US2011/033798 2011.04.25
- 国际公布： WO2011/133976 EN 2011.10.27
- 进入国家日期： 2012-10-23
- 主分类号： C01B19/02
- IPC分类号： C01B19/02 ; B82B3/00 ; B82B1/00 ; B82Y40/00
An ultrathin tellurium nanowire structure is disclosed, including a rod-like crystalline structure of tellurium, wherein the crystalline structure is defined by diameters of between 5-6 nm. In addition, an ultrathin tellurium-based nanowire structure is disclosed including a rod-like crystalline structure of one of lead telluride and bismuth telluride, wherein an ultrathin tellurium nanowire structure is used as a precursor to generate the rod-like crystalline structure.Furthermore, a nanoscale heterostructure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod- like portions, wherein the center rod-like portion is a tellurium-based nanowire structure and the octahedral structures are one of lead telluride, cadmium telluride, and bismuth telluride.