基本信息:
- 专利标题： 相移电控制取样光栅半导体激光器及其设置方法
- 专利标题（英）：Phase-shift electric-control sampling grating semiconductor laser and setting method therefor
- 申请号：CN201210370711.9 申请日：2012-09-29
- 公开(公告)号：CN102916340A 公开(公告)日：2013-02-06
- 发明人： 周亚亭 , 陈向飞
- 申请人： 南京大学
- 申请人地址： 江苏省南京市鼓楼区汉口路22号
- 专利权人： 南京大学
- 当前专利权人： 南京大学
- 当前专利权人地址： 江苏省南京市鼓楼区汉口路22号
- 代理机构： 南京瑞弘专利商标事务所
- 代理人： 徐激波
- 主分类号： H01S5/12
- IPC分类号： H01S5/12
The invention proposes a phase-shift electric-control sampling grating semiconductor laser. A DFB (distributed feed back) semiconductor laser consists of a first sampling grating area, a second sampling grating area and a phase-shift area, wherein gratings in the two sampling grating areas are sampling bragg gratings (SBG), the phase-shift area is positioned in the middle, and the sampling period is 1-10 micrometers; electrodes of the two sampling grating areas are connected together and are isolated from an electrode of the phase-shift area; the effective refractive index and the length of the sampling grating areas are expressed by nSBG and nP, and the effective refractive index and the length of the phase-shift area are expressed by LSBG and LP; and the primary control on the hot-shot wavelength of the laser can be realized only by changing the sampling period P, so as to form the phase-shift electric-control SBG DFB semiconductor laser.
公开/授权文献:
- CN102916340B 相移电控制取样光栅半导体激光器及其设置方法 公开/授权日：2015-01-21