基本信息:
- 专利标题： 离子注入装置及离子注入方法
- 申请号：CN201210199695.1 申请日：2012-06-14
- 公开(公告)号：CN102832092B 公开(公告)日：2017-05-10
- 发明人： 二宫史郎 , 工藤哲也
- 申请人： 斯伊恩股份有限公司
- 申请人地址： 日本东京都
- 专利权人： 斯伊恩股份有限公司
- 当前专利权人： 斯伊恩股份有限公司
- 当前专利权人地址： 日本东京都
- 代理机构： 永新专利商标代理有限公司
- 代理人： 张伟; 王英
- 优先权： 132216/2011 20110614 JP
- 主分类号： H01J37/02
- IPC分类号： H01J37/02 ; H01J37/317
An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.
公开/授权文献:
- CN102832092A 离子注入装置及离子注入方法 公开/授权日：2012-12-19