基本信息:
- 专利标题： 基于竖直微气孔的Si与GaInAs低温键合方法
- 专利标题（英）：Si-GaInAs low-temperature bonding method based on vertical micro-pores
- 申请号：CN201210280493.X 申请日：2012-08-08
- 公开(公告)号：CN102769074A 公开(公告)日：2012-11-07
- 发明人： 高鹏 , 刘如彬 , 王帅 , 张启明 , 康培 , 孙强 , 穆杰
- 申请人： 天津蓝天太阳科技有限公司 , 中国电子科技集团公司第十八研究所
- 申请人地址： 天津市西青区华苑产业园区海泰发展四道15号
- 专利权人： 天津蓝天太阳科技有限公司,中国电子科技集团公司第十八研究所
- 当前专利权人： 天津蓝天太阳科技有限公司,中国电子科技集团公司第十八研究所,中电科蓝天科技股份有限公司
- 当前专利权人地址： 300384 天津市滨海新区华苑产业区(环外)海泰华科七路6号太阳电池及控制器厂房二层
- 代理机构： 天津市鼎和专利商标代理有限公司
- 代理人： 李凤
- 主分类号： H01L31/18
- IPC分类号： H01L31/18
The invention relates to a Si-GaInAs low-temperature bonding method based on vertical micro-pores. The Si-GaInAs low-temperature bonding method comprises a preparation process of polishing a Si substrate and a GaInAs epitaxial wafer, and bonding the Si substrate with the GaInAs epitaxial wafer integrally below 400 DEG C. The Si-GaInAs low-temperature bonding method is characterized in that vertical micro-pore arrays are manufactured on the bonding surface of the Si substrate. The vertical micro-pore arrays are manufactured on the bonding surface of the Si substrate as channels, and when the low-temperature bonding of the Si substrate and the GaInAS epitaxial wafer is carried out, generated micro-holes and microbubbles enter the vertical micro-pores used as the channels along with bonding pressure, thus avoiding occurrence of the micro-holes and microbubbles between contact surfaces during the low-temperature bonding of the Si substrate and the GaInAs epitaxial wafer, and improving performances of solar batteries effectively.
公开/授权文献:
- CN102769074B 基于竖直微气孔的Si与GaInAs低温键合方法 公开/授权日：2014-11-05