![半导体用膜和半导体装置的制造方法](/CN/2010/8/6/images/201080031084.jpg)
基本信息:
- 专利标题: 半导体用膜和半导体装置的制造方法
- 专利标题(英):Film for semiconductor and semiconductor device manufacturing method
- 申请号:CN201080031084.5 申请日:2010-05-31
- 公开(公告)号:CN102473618A 公开(公告)日:2012-05-23
- 发明人: 安田浩幸 , 平野孝
- 申请人: 住友电木株式会社
- 申请人地址: 日本东京都
- 专利权人: 住友电木株式会社
- 当前专利权人: 住友电木株式会社
- 当前专利权人地址: 日本东京都
- 代理机构: 隆天国际知识产权代理有限公司
- 代理人: 崔香丹; 洪燕
- 优先权: 2009-163034 2009.07.09 JP
- 国际申请: PCT/JP2010/059188 2010.05.31
- 国际公布: WO2011/004657 JA 2011.01.13
- 进入国家日期: 2012-01-09
- 主分类号: H01L21/301
- IPC分类号: H01L21/301 ; C09J5/00 ; C09J7/02 ; C09J201/00
A film for a semiconductor comprises a support film, a second adhesive layer, a first adhesive layer, and a bonding layer stacked in this order. The film for a semiconductor allows a semiconductor wafer to be stacked on the bonding layer, supports the semiconductor wafer when the semiconductor wafer is diced, and is structured so as to be selectively peeled off at the interface between the first adhesive layer and the bonding layer when the cut and separated semiconductor wafer (semiconductor device) is picked up. The film for a semiconductor is stacked with a semiconductor wafer, which is cut and separated by dicing, and then the adhesive forces of the obtained semiconductor device are measured. The film for a semiconductor is characterized in that when the adhesive force at the edge portion of a semiconductor device is denoted by a (N/cm) and the adhesive force at the central portion (portion other than the edge portion) of the semiconductor device is denoted by b (N/cm), the ratio a/b is 1 to 4 inclusive. Since the ratio a/b is optimized, when picking up a semiconductor device, it is possible to reliably prevent problems such as cracks, breaks, etc., of the semiconductor device caused by a high load locally applied to the semiconductor device.
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/301 | .....把半导体再细分成分离部分,例如分隔 |